Evaluation of Heavy-Ion-Induced SEU Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Based on Stacked Inverter

Cross sections to cause single event upsets by heavy ions are sensitive to dopant concentration in diffusion and the structure of the raised layer especially in FDSOI. Due to the parasitic bipolar effect, radiation-hardened FFs using the stacked structure in FDSOI are not free from soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in drain.