D. Veksler, G. Bersuker, Adam W. Bushmaker, M. Mason, P. Shrestha, K. Cheung, J. Campbell, T. Rueckes, L. Cleveland, H. Luan, D. Gilmer
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Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.
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