抑制回漏电流的低压CMOS工艺电荷泵电路设计

Y. Weng, H. Tsai, M. Ker
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引用次数: 14

摘要

提出了一种新的电荷泵电路,可以有效地抑制回漏电流,避免了低压CMOS工艺中栅极氧化物的过应力问题。一个测试芯片已经在65纳米CMOS工艺中实现,以验证所提出的具有四个泵浦级的电荷泵电路。在1.8 V的供电电压下,测量输出电压在8.8 V左右,优于同等泵浦级的常规电荷泵电路。该电荷泵电路减小了回漏电流,且不存在栅-氧化物可靠性问题,适用于低压CMOS集成电路产品。
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Design of charge pump circuit in low-voltage CMOS process with suppressed return-back leakage current
A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide overstress problem in low-voltage CMOS process. A test chip has been implemented in a 65-nm CMOS process to verify the proposed charge pump circuit with four pumping stages. The measured output voltage is around 8.8 V with 1.8-V supply voltage, which is better than the conventional charge pump circuit with the same pumping stages. By reducing the return-back leakage current and without suffering gate-oxide reliability problem, the new proposed charge pump circuit is suitable for the applications in low-voltage CMOS IC products.
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