Y. Mao, K. Schmalz, J. Borngräber, J. Scheytt, C. Meliani
{"title":"SiGe中的245ghz次谐波接收机","authors":"Y. Mao, K. Schmalz, J. Borngräber, J. Scheytt, C. Meliani","doi":"10.1109/RFIC.2013.6569533","DOIUrl":null,"url":null,"abstract":"Two subharmonic receivers for 245 GHz spectroscopy sensor applications in the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists of a single-ended four-stage CB (common base) LNA, an 2nd APDP passive SHM, an IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The receivers are fabricated in a SiGe:C BiCMOS technology with fT/fmax=300/500 GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17 dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"245 GHz subharmonic receivers in SiGe\",\"authors\":\"Y. Mao, K. Schmalz, J. Borngräber, J. Scheytt, C. Meliani\",\"doi\":\"10.1109/RFIC.2013.6569533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two subharmonic receivers for 245 GHz spectroscopy sensor applications in the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists of a single-ended four-stage CB (common base) LNA, an 2nd APDP passive SHM, an IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The receivers are fabricated in a SiGe:C BiCMOS technology with fT/fmax=300/500 GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17 dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two subharmonic receivers for 245 GHz spectroscopy sensor applications in the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists of a single-ended four-stage CB (common base) LNA, an 2nd APDP passive SHM, an IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The receivers are fabricated in a SiGe:C BiCMOS technology with fT/fmax=300/500 GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17 dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively.