C. Chia, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, G. Dalapati, Terry Zhuo Qiuwei
{"title":"用于器件应用的Ge和GaAs集成","authors":"C. Chia, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, G. Dalapati, Terry Zhuo Qiuwei","doi":"10.1109/ISTDM.2014.6874693","DOIUrl":null,"url":null,"abstract":"We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ge and GaAs integration for device applications\",\"authors\":\"C. Chia, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, G. Dalapati, Terry Zhuo Qiuwei\",\"doi\":\"10.1109/ISTDM.2014.6874693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.
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