{"title":"超薄栅极氧化物在BT应力下V/亚TH/分布的时间演化","authors":"Y. Mitani, H. Satake","doi":"10.1109/ICICDT.2004.1309978","DOIUrl":null,"url":null,"abstract":"In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides\",\"authors\":\"Y. Mitani, H. Satake\",\"doi\":\"10.1109/ICICDT.2004.1309978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides
In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.
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