基于固体源分子束外延的InGaP在Ge(001)上的迁移增强外延

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874658

W. Loke, Qian Zhou, X. Gong, M. Owen, S. Wicaksono, K. Tan, Y. Yeo, S. Yoon

{"title":"基于固体源分子束外延的InGaP在Ge(001)上的迁移增强外延","authors":"W. Loke, Qian Zhou, X. Gong, M. Owen, S. Wicaksono, K. Tan, Y. Yeo, S. Yoon","doi":"10.1109/ISTDM.2014.6874658","DOIUrl":null,"url":null,"abstract":"MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Migration enhanced epitaxy of InGaP on offcut Ge (001) using solid-source molecular beam epitaxy\",\"authors\":\"W. Loke, Qian Zhou, X. Gong, M. Owen, S. Wicaksono, K. Tan, Y. Yeo, S. Yoon\",\"doi\":\"10.1109/ISTDM.2014.6874658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了InGaP在(001)取向Ge表面(10°切边)上在GeOI衬底上的MEE生长。TEM检测表明，在Ge表面，InGaP材料的结晶质量良好。为了实现无缺陷的InGaP/Ge界面和后续的涂层，需要进一步优化MEE-InGaP工艺。

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Migration enhanced epitaxy of InGaP on offcut Ge (001) using solid-source molecular beam epitaxy

MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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