{"title":"Si/SiON体系中的原子尺度缺陷与负偏置温度不稳定性","authors":"P. Lenahan","doi":"10.1109/ICICDT.2004.1309970","DOIUrl":null,"url":null,"abstract":"This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic scale defects in the Si/SiON system and the negative bias temperature instability\",\"authors\":\"P. Lenahan\",\"doi\":\"10.1109/ICICDT.2004.1309970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic scale defects in the Si/SiON system and the negative bias temperature instability
This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.
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