具有高导通电流和陡SS的双源u型栅极隧道场效应管

2016 16th International Workshop on Junction Technology (IWJT) Pub Date : 2016-05-09 DOI:10.1109/IWJT.2016.7486666

Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang

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引用次数: 5

摘要

研究了双源区和u型栅隧道场效应晶体管(DUTFET)的电流电压特性。u型闸板可扩大掘进面积，降低阈下摆幅。卓越的性能使其在取代传统的隧道场效应晶体管(TFET)方面非常有吸引力，特别是在低功耗应用中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dual sources U-shape gate tunnel FETs with high on-current and steep SS

The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.

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2016 16th International Workshop on Junction Technology (IWJT)

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