非易失性存储器可靠性测试的复杂性是由测试结构引起的

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706515

A. Keshavarz, Gregory S. Spawn, Nelson Delos Reyes, Rogelio Mincitar, Laurent F. Dion

{"title":"非易失性存储器可靠性测试的复杂性是由测试结构引起的","authors":"A. Keshavarz, Gregory S. Spawn, Nelson Delos Reyes, Rogelio Mincitar, Laurent F. Dion","doi":"10.1109/IIRW.2010.5706515","DOIUrl":null,"url":null,"abstract":"This paper shows the sensitivity of the non-volatile memory reliability test to the test structure design and the pad sharing with other devices. Detailed results are presented to show how other devices on the same test structure can interfere with the EEPROM endurance test results and cause dramatic shifts in the data.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"2274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Complexities of the non-volatile memory reliability testing caused by the test structure\",\"authors\":\"A. Keshavarz, Gregory S. Spawn, Nelson Delos Reyes, Rogelio Mincitar, Laurent F. Dion\",\"doi\":\"10.1109/IIRW.2010.5706515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper shows the sensitivity of the non-volatile memory reliability test to the test structure design and the pad sharing with other devices. Detailed results are presented to show how other devices on the same test structure can interfere with the EEPROM endurance test results and cause dramatic shifts in the data.\",\"PeriodicalId\":332664,\"journal\":{\"name\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"2274 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2010.5706515\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文论述了非易失性存储器可靠性测试对测试结构设计和与其他器件的衬垫共享的敏感性。详细的结果显示，在相同的测试结构上的其他设备如何干扰EEPROM耐久性测试结果，并导致数据的急剧变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Complexities of the non-volatile memory reliability testing caused by the test structure

This paper shows the sensitivity of the non-volatile memory reliability test to the test structure design and the pad sharing with other devices. Detailed results are presented to show how other devices on the same test structure can interfere with the EEPROM endurance test results and cause dramatic shifts in the data.

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2010 IEEE International Integrated Reliability Workshop Final Report

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