E. H. Bottcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg
{"title":"InAs/GaAs量子点:一种在GaAs上用于超高速、长波长光电探测器的材料","authors":"E. H. Bottcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg","doi":"10.1109/ICIPRM.1999.773701","DOIUrl":null,"url":null,"abstract":"The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InAs/GaAs quantum dots: a material for very highspeed, long-wavelength photodetectors on GaAs\",\"authors\":\"E. H. Bottcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg\",\"doi\":\"10.1109/ICIPRM.1999.773701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs/GaAs quantum dots: a material for very highspeed, long-wavelength photodetectors on GaAs
The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.
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