26.2一个5.5fJ/ convstep 6.4MS/S 13b SAR ADC,采用冗余辅助背景错误检测和校正方案

M. Ding, P. Harpe, Yao-Hong Liu, B. Busze, K. Philips, H. D. Groot
{"title":"26.2一个5.5fJ/ convstep 6.4MS/S 13b SAR ADC,采用冗余辅助背景错误检测和校正方案","authors":"M. Ding, P. Harpe, Yao-Hong Liu, B. Busze, K. Philips, H. D. Groot","doi":"10.1109/ISSCC.2015.7063125","DOIUrl":null,"url":null,"abstract":"Wireless standards, e.g., 802.15.4g, need high-resolution ADCs (>10b) with very low power and MS/s sampling rates. The SAR ADC is well known for its excellent power efficiency. However, its intrinsic accuracy (DAC matching) is limited up to 10 to 12b in modern CMOS technologies [1]. Scaling up the device dimensions can improve matching but it deteriorates power-efficiency and speed. Alternatively, calibrations [2-5] are introduced to correct errors (e.g., comparator offset and capacitor mismatch) and push the SNDR beyond 62dB. However, most of the calibrations [2-4] are implemented off-chip and the power for the calibration circuit is relatively high when implemented on-chip. Foreground calibration [4-5] is an alternative but is sensitive to environmental changes. We report a low-power fully automated on-chip background calibration that uses a redundancy-facilitated error-detection-and-correction scheme. Thanks to the low-power calibration, this ADC achieves an ENOB of 10.4b and a power efficiency of 5.5fJ/conv-step at 6.4MS/S.","PeriodicalId":188403,"journal":{"name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"26.2 A 5.5fJ/conv-step 6.4MS/S 13b SAR ADC utilizing a redundancy-facilitated background error-detection-and-correction scheme\",\"authors\":\"M. Ding, P. Harpe, Yao-Hong Liu, B. Busze, K. Philips, H. D. Groot\",\"doi\":\"10.1109/ISSCC.2015.7063125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wireless standards, e.g., 802.15.4g, need high-resolution ADCs (>10b) with very low power and MS/s sampling rates. The SAR ADC is well known for its excellent power efficiency. However, its intrinsic accuracy (DAC matching) is limited up to 10 to 12b in modern CMOS technologies [1]. Scaling up the device dimensions can improve matching but it deteriorates power-efficiency and speed. Alternatively, calibrations [2-5] are introduced to correct errors (e.g., comparator offset and capacitor mismatch) and push the SNDR beyond 62dB. However, most of the calibrations [2-4] are implemented off-chip and the power for the calibration circuit is relatively high when implemented on-chip. Foreground calibration [4-5] is an alternative but is sensitive to environmental changes. We report a low-power fully automated on-chip background calibration that uses a redundancy-facilitated error-detection-and-correction scheme. Thanks to the low-power calibration, this ADC achieves an ENOB of 10.4b and a power efficiency of 5.5fJ/conv-step at 6.4MS/S.\",\"PeriodicalId\":188403,\"journal\":{\"name\":\"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2015.7063125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2015.7063125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43

摘要

无线标准,例如802.15.4g,需要高分辨率adc (>10b),具有非常低的功耗和MS/s采样率。SAR ADC以其出色的功率效率而闻名。然而,在现代CMOS技术中,其固有精度(DAC匹配)被限制在10到12b[1]。扩大设备尺寸可以改善匹配,但它会降低功率效率和速度。或者,引入校准[2-5]来纠正错误(例如,比较器偏移和电容失配)并将SNDR推至62dB以上。然而,大多数校准[2-4]都是在片外实现的,而在片上实现时,校准电路的功耗相对较高。前景校准[4-5]是另一种方法,但对环境变化很敏感。我们报告了一种低功耗全自动片上背景校准,该校准使用冗余促进的错误检测和校正方案。得益于低功耗校准,该ADC在6.4MS/S下实现了10.4b的ENOB和5.5fJ/ convo -step的功率效率。
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26.2 A 5.5fJ/conv-step 6.4MS/S 13b SAR ADC utilizing a redundancy-facilitated background error-detection-and-correction scheme
Wireless standards, e.g., 802.15.4g, need high-resolution ADCs (>10b) with very low power and MS/s sampling rates. The SAR ADC is well known for its excellent power efficiency. However, its intrinsic accuracy (DAC matching) is limited up to 10 to 12b in modern CMOS technologies [1]. Scaling up the device dimensions can improve matching but it deteriorates power-efficiency and speed. Alternatively, calibrations [2-5] are introduced to correct errors (e.g., comparator offset and capacitor mismatch) and push the SNDR beyond 62dB. However, most of the calibrations [2-4] are implemented off-chip and the power for the calibration circuit is relatively high when implemented on-chip. Foreground calibration [4-5] is an alternative but is sensitive to environmental changes. We report a low-power fully automated on-chip background calibration that uses a redundancy-facilitated error-detection-and-correction scheme. Thanks to the low-power calibration, this ADC achieves an ENOB of 10.4b and a power efficiency of 5.5fJ/conv-step at 6.4MS/S.
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