{"title":"谐振隧道异质结双极晶体管及其在高功能/高速数字电路中的应用","authors":"G. Haddad","doi":"10.1109/ICIPRM.1996.491952","DOIUrl":null,"url":null,"abstract":"Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits\",\"authors\":\"G. Haddad\",\"doi\":\"10.1109/ICIPRM.1996.491952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits
Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.
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