3.4采用28nm CMOS的8b 18GS/ s DAC的36Gb/s PAM4发射机

A. Nazemi, Kangmin Hu, B. Çatli, D. Cui, U. Singh, Tim He, Z. Huang, Bo Zhang, A. Momtaz, Jun Cao
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引用次数: 40

摘要

在数据速率超过10Gb/s时,大多数有线链路采用NRZ信号。据报道,串行NRZ链路高达56Gb/s和60Gb/s[1]。然而,随着速率的增加,通道、封装和芯片所施加的限制变得更加严重,并且不能像电路设计那样从工艺缩放中受益。由过孔和连接器引起的PCB和封装中阻抗不连续的反射在较高频率下会导致显著的信号损失和失真。即使有理想的通道,在每个封装-芯片接口处,由于焊盘和ESD电路,存在至少150fF的固有寄生电容,并且在发射和接收端都有50Ω电阻终止,导致固有极在23GHz或更低。考虑到所有这些限制,超过60Gb/s的串行NRZ信令在功率和性能方面似乎都不是最佳的。利用各种调制技术,如PAM4,可以实现更高的频谱效率[2]。为了实现这样的传输格式,需要高速、中等分辨率的数据转换器。本文介绍了一种基于18GS/s 8b DAC的36Gb/s发送器,采用28nm CMOS实现,符合100G以太网背板和铜缆的新IEEE802.3bj标准[3]。
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3.4 A 36Gb/s PAM4 transmitter using an 8b 18GS/S DAC in 28nm CMOS
At data rates beyond 10Gb/s, most wireline links employ NRZ signaling. Serial NRZ links as high as 56Gb/s and 60Gb/s have been reported [1]. Nevertheless, as the rate increases, the constraints imposed by the channel, package, and die become more severe and do not benefit from process scaling in the same fashion that circuit design does. Reflections from impedance discontinuities in the PCB and package caused by vias and connectors introduce significant signal loss and distortions at higher frequencies. Even with an ideal channel, at every package-die interface, there is an intrinsic parasitic capacitance due to the pads and the ESD circuit amounting to at least 150fF, and a 50Ω resistor termination at both the transmit and receive ends resulting in an intrinsic pole at 23GHz or lower. In light of all these limitations, serial NRZ signaling beyond 60Gb/s appears suboptimal in terms of both power and performance. Utilizing various modulation techniques such as PAM4, one can achieve a higher spectral efficiency [2]. To enable such transmission formats, high-speed moderate-resolution data converters are required. This paper describes a 36Gb/s transmitter based on an 18GS/s 8b DAC implemented in 28nm CMOS, compliant to the new IEEE802.3bj standard for 100G Ethernet over backplane and copper cables [3].
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