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引用次数: 5
摘要
在无线通信的射频集成电路(RFIC)领域，CMOS正与双极和GaAs展开竞争。SOI技术由于其改进的射频性能而在基于si的CMOS系列中赢得了更多的赞誉。SOI保证了比本体技术更好的器件特性，并减少了衬底噪声耦合。此外，埋地氧化物提高了片上平面电感的质量(Q)因子。到目前为止，只报道了基于SOI/SOS技术的单晶体管低噪声放大器(LNA)的结果(Johnson et al.， 1998;Harada et al.， 1998)。本文报道了第一个具有级联码拓扑的SOI LNA，它比其他电路配置提供了性能优势。LNA电路工作在1.8 GHz，可以用作个人通信服务(PCS)系统的前端放大器，分配在1.7 GHz和1.9 GHz频段内。
1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers
CMOS is competing with bipolar and GaAs in the radio-frequency integrated circuits (RFIC) arena for wireless communications. SOI technology earns more credit for the Si-based CMOS family due to its improved RF performance. SOI promises better device characteristics than bulk technology and reduces substrate noise coupling. In addition, the buried oxide improves the quality (Q) factor of the on-chip planar inductors. So far, only the results of single-transistor low-noise amplifiers (LNA) based on SOI/SOS technology have been reported (Johnson et al., 1998; Harada et al., 1998). This paper reports the first SOI LNA with a cascode topology which offers performance advantages over other circuit configurations. The LNA circuit, operating at 1.8 GHz, can be used as a front-end amplifier for personal communications services (PCS) systems, which are allocated within the 1.7 GHz and 1.9 GHz band.
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