C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang
{"title":"铜丝键合过程的有限元建模及可靠性研究","authors":"C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang","doi":"10.1109/ESIME.2011.5765789","DOIUrl":null,"url":null,"abstract":"Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"219 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"FE modeling of Cu wire bond process and reliability\",\"authors\":\"C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang\",\"doi\":\"10.1109/ESIME.2011.5765789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.\",\"PeriodicalId\":115489,\"journal\":{\"name\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"volume\":\"219 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2011.5765789\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2011.5765789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
FE modeling of Cu wire bond process and reliability
Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.