采用新型Cu/Ta2O5/W结构的低流压电阻开关存储器

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159279

S. Z. Rahaman, S. Maikap, C. Lin, T. Wu, Y. S. Chen, P. Tzeng, F. Chen, C. S. Lai, M. Kao, M. Tsai

{"title":"采用新型Cu/Ta2O5/W结构的低流压电阻开关存储器","authors":"S. Z. Rahaman, S. Maikap, C. Lin, T. Wu, Y. S. Chen, P. Tzeng, F. Chen, C. S. Lai, M. Kao, M. Tsai","doi":"10.1109/VTSA.2009.5159279","DOIUrl":null,"url":null,"abstract":"Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure has been proposed. The low resistance state (R<inf>Low</inf>) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R<inf>High</inf>/R<inf>Low</inf>) of 5.3×107, good endurance of ≫103 cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×103 can be useful in future non-volatile memory applications.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure\",\"authors\":\"S. Z. Rahaman, S. Maikap, C. Lin, T. Wu, Y. S. Chen, P. Tzeng, F. Chen, C. S. Lai, M. Kao, M. Tsai\",\"doi\":\"10.1109/VTSA.2009.5159279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure has been proposed. The low resistance state (R<inf>Low</inf>) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R<inf>High</inf>/R<inf>Low</inf>) of 5.3×107, good endurance of ≫103 cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×103 can be useful in future non-volatile memory applications.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了一种Cu/Ta2O5/W结构的低电流/电压(~ 10na /1.0V)电阻开关存储器件。当编程电流从10na增加到1mA时，存储器件的低阻状态(RLow)降低，可用于数据的多级存储。该阻性存储器具有稳定的阈值电压，良好的电阻比(RHigh/RLow) 5.3×107，良好的续航时间(103次)，良好的保持时间(11小时)，电阻比(9×103)，可用于未来的非易失性存储器应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3×10⁷, good endurance of ≫10³ cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×10³ can be useful in future non-volatile memory applications.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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