M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel
{"title":"具有拉伸应变InGaAs/InGaAsP MQW结构的偏振不敏感干涉波长转换器","authors":"M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel","doi":"10.1109/ICIPRM.1996.491979","DOIUrl":null,"url":null,"abstract":"Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure\",\"authors\":\"M. Schilling, P. Wiedemann, K. Daub, W. Idler, M. Klenk, U. Koerner, E. Lach, G. Laube, K. Wunstel\",\"doi\":\"10.1109/ICIPRM.1996.491979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio /spl les/1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated.