V. Hurm, W. Benz, M. Berroth, W. Bronner, T. Fink, M. Haupt, K. Kohler, M. Ludwig, B. Raynor, J. Rosenzweig
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引用次数: 7
摘要
采用0.3 μ l μ l μ m栅长AlGaAs-GaAs HEMT工艺，在GaAs衬底上制备了首个10 Gbit/s波长1.3-1.55 μ l /m的单片集成光接收器。在1.3 /spl mu/m波长下，集成的InGaAs MSM光电二极管的直流响应率为0.34 a /W。光电接收机带宽为7.1 GHz，灵敏度优于-14.7 dBm (BER=10/sup -9/)。
10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs
The first 10 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 /spl mu/m gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 /spl mu/m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10/sup -9/).
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