弯曲载荷作用下衬底灌封复合界面单调与疲劳断裂测量研究

P. Lall, Padmanava Choudhury, K. Blecker
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引用次数: 0

摘要

在恶劣环境中的电子产品经常受到高达50,000 g的极端冲击载荷,潮湿和高温。pcb的灌封通常用于提供极端机械冲击负载,振动负载和热机械负载的保护。固化的灌封材料在动态冲击载荷下容易发生界面分层,从而可能导致封装互连失效。关于灌封化合物的文献主要集中在最终应用的可靠性或块状材料性能的研究上。本文采用四点弯曲试样对基材/环氧树脂体系进行了研究,并测量了双材料带的断裂参数,以确定界面分层机制。将基材/环氧树脂双材料条带在100℃高温下保持时效。然后对试件进行准静态单调加载和循环加载,观察双材料带材的临界应力强度因子、疲劳斜率参数和降解界面粘结强度。环氧树脂a是一种刚性材料,抗拉强度为12260 psi。用应变能释放率表征了两种环氧树脂体系界面分层的单调临界应力强度因子和疲劳裂纹扩展。利用巴黎幂律对循环弯曲载荷下的循环失效次数和不同环氧树脂体系的性能进行了预测。
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Study of Interface Monotonic and Fatigue Fracture Measurements at the Substrate Potting Compound Interfaces Under Flexure Loading
Electronics in harsh environments are often subjected to extreme shock loading up to 50,000Gs, moisture, and high temperature. Potting of PCBs is often used to provide protection from extreme mechanical shock loads, vibration loads, and thermo-mechanical loads. The cured potting materials are prone to interfacial delamination under dynamic shock loading, which in turn may potentially cause failures in the package interconnects. The literature on potting compounds primarily focuses on the reliability in end application or the study of bulk material properties. This paper uses a four-point bend specimen to study the Substrate/Epoxy system and measure the fracture parameters of the bi-material strips to determine the interface delamination mechanisms. The bi-material strips of Substrate/Epoxy was kept at elevated temperatures of 100°C for aging. Then the sample specimens were subjected to quasi-static monotonic and cyclic loading to observe the critical stress intensity factors, fatigue slope parameters, and degradation interfaces bond adhesion of bi-material strips. Epoxy-A is a stiff material with 12,260 psi of tensile strength. The monotonic critical stress intensity factors and fatigue crack growth of the interfacial delamination for the two epoxy systems were characterized using strain energy release rate. A prediction of a number of cycles to failure and the performance of different epoxy system resistance was evaluated during cyclic bending loading using Paris Power Law.
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