DRAM制造中多晶硅CMP下抛光增加的根本原因识别和缓解

2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI:10.1109/asmc54647.2022.9792484

Russell McCabe, R. Chaudhuri, S. Spangler, Russ Heller, A. Tahraoui, Emmett Synder, W. Simpson, Michael Frachel, Glen Martin

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摘要

提出了一种系统的方法来识别和减少大批量生产中聚CMP下抛光增加的根本原因。利用适当的在线计量和晶圆探头数据，强调了产品质量和良率提高的不同方面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Root Cause Identification and Mitigation of Polysilicon CMP Underpolish Increase in DRAM Manufacturing

A systematic approach for root cause identification and mitigation of poly CMP underpolish increase in high volume manufacturing is presented. Different aspects of product quality and yield enhancement has been highlighted utilizing appropriate inline metrology and wafer probe data.

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2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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