混合信号应用的铜顶互连可靠性

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706483

Jonggook Kim, B. O'Connell, W. K. Teng, M. Poulter

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引用次数: 0

摘要

本文推导了铜顶(Cu-Top)互连的电阻漂移控制氧化方程，以评估Cu-Top互连的可靠性。我们的方程不仅通过在不同温度下的热存储测试来证明，而且还以时间、温度、金属宽度和Cu-Top上额外的介电和导电层的依赖性为特征。因此，这种方法能够预测在任何条件下的累积电阻漂移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Copper - top interconnect reliability for mixed signal applications

The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.

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2010 IEEE International Integrated Reliability Workshop Final Report

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