纳米技术时代电路设计的内置可靠性分析

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309946

Zhihong Liu, Weiquan Zhang, Fuchen Mu

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引用次数: 4

摘要

本文介绍了一种新型技术的可靠性建模与仿真方法。讨论了热载流子注入(HCI)和负偏置温度不稳定性(NBTI)对寿命和老化模型参数法的提取。将这些模型集成到晶体管级和栅极级仿真流程中，设计人员可以使用这些模型来满足可靠性要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Build-in reliability analysis for circuit design in the nanometer technology era

In this paper, the methodology of the reliability modeling and simulation for the state-of-the-art technology is presented. The extraction for HCI (Hot Carrier Injection) and NBTI (Negative Bias Temperature Instability) for both lifetime and aged model parameter method is discussed. The integration of these models into the transistor level and gate level simulation flow can be used by the designers to satisfy the reliability requirements.

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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