压力源对未来基于sigf的finfet的影响:移动性提升和可扩展性

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874646

G. Eneman, D. Brunco, L. Witters, J. Mitard, A. Hikavyy, A. De Keersgieter, P. Roussel, R. Loo, A. Veloso, N. Horiguchi, N. Collaert, A. Thean

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引用次数: 1

摘要

S/D外延层和srb是缩放finfet中最有效的应力源。虽然S/D压力源已经建立，但对于srb来说，仍然存在重大的技术困难。然而，其预期的性能提升和增强的可扩展性使得开发srb是值得的，特别是当与其他通道材料结合使用时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability

S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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