R. A. Katia Sasaki, R. Rangel, L. Yojo, J. Martino
{"title":"UTBB晶圆上制备的第三代背增强SOI pMOSFET","authors":"R. A. Katia Sasaki, R. Rangel, L. Yojo, J. Martino","doi":"10.1109/SBMicro.2019.8919335","DOIUrl":null,"url":null,"abstract":"The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Third Generation BESOI (Back-Enhanced SOI) pMOSFET fabricated on UTBB Wafer\",\"authors\":\"R. A. Katia Sasaki, R. Rangel, L. Yojo, J. Martino\",\"doi\":\"10.1109/SBMicro.2019.8919335\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919335\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Third Generation BESOI (Back-Enhanced SOI) pMOSFET fabricated on UTBB Wafer
The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.
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