STT-MRAM和NV-Logic用于低功率系统

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) Pub Date : 2013-10-01 DOI:10.1109/E3S.2013.6705864

T. Endoh

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引用次数: 3

摘要

最近，在半导体存储器中，仅仅基于器件缩放的技术发展越来越难以满足目标性能要求。特别是由于MOSFET存储器容量的增加、运算速度的提高和漏电流的增大，使得LSI的功耗正在迅速增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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STT-MRAM and NV-Logic for low power systems

Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

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2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

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