D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut
{"title":"曲径型lpe - p和GaInAsP层生长的新方法","authors":"D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut","doi":"10.1109/ICIPRM.1996.492308","DOIUrl":null,"url":null,"abstract":"The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Meander type LPE-new approach to growth InP and GaInAsP layers\",\"authors\":\"D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut\",\"doi\":\"10.1109/ICIPRM.1996.492308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"11 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Meander type LPE-new approach to growth InP and GaInAsP layers
The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.
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