FDSOI CMOS with dual backgate control for performance and power modulation

We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilitates an effective modulation of ring characteristics with small (1–2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100× with 30% increase of inverter delay. In addition, the inverter delay can be improved by 15% with 2× increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the baekgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.