应变Ge0.96Sn0.04 p沟道mosfet与原位低温Si2H6表面钝化

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874637

Yan Liu, Jing Yan, G. Han, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, B. Cheng, Y. Hao

{"title":"应变Ge0.96Sn0.04 p沟道mosfet与原位低温Si2H6表面钝化","authors":"Yan Liu, Jing Yan, G. Han, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, B. Cheng, Y. Hao","doi":"10.1109/ISTDM.2014.6874637","DOIUrl":null,"url":null,"abstract":"We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm-2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation\",\"authors\":\"Yan Liu, Jing Yan, G. Han, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, B. Cheng, Y. Hao\",\"doi\":\"10.1109/ISTDM.2014.6874637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm-2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们开发了用原位低温Si2H6钝化模块制造GeSn pMOSFET的工艺流程。制备了高性能的Ge0.96Sn0.04 pmosfet。在Qmv为6×1012 cm-2时，Ge0.96Sn0.04 pmosfet的μeff比对照组提高了24%。

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Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si₂H₆ passivation module. High performance Ge_0.96Sn_0.04 pMOSFETs were fabricated. At a Q_mv of 6×10¹² cm^-2, a 24% enhancement in μ_eff is demonstrated in Ge_0.96Sn_0.04 pMOSFETs compared to Ge control.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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