Co-60和x射线照射下DDR3 sdram的总电离剂量效应

P. Kohler, V. Pouget, F. Saigné, J. Boch, T. Maraine, P. Wang, M. Vassal
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引用次数: 1

摘要

分析了商用现货(COTS) DDR3存储器的TID灵敏度。描述了使用动态测试方法进行60CO和x射线表征活动的实验设置和结果。参数漂移和功能失效,包括数据保留时间测试,观察和讨论。另外一个60CO测试活动,使用静态测试方法,突出了伽马射线照射时应用偏置模式的影响。随着节能越来越成为dram发展的关键驱动因素,制造商已经开发出低功耗运行模式,可以在组件空闲时激活,从而降低其功耗。本文通过实验揭示了tid诱导的高灵敏度低功耗模式。
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Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiation
This paper presents an analysis of the TID sensitivity of Commercial Off-the-Shelf (COTS) DDR3 memories. Experimental setup and results following 60CO and X-ray characterization campaigns using dynamic test methods are described. Parametric drifts and functional failures, including data retention time test, are observed and discussed. An additional 60CO test campaign, using static test method highlights the impact of the applied biasing mode during gamma ray irradiation. As energy saving has become increasingly a key driver of the DRAMs evolution, manufacturers has developed operating low power modes, that can be activated while the component is idle, reducing its power consumption. This paper experimentally reveals a TID-induced higher sensitivity of those low power modes.
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