Si/SOI逆温层中的普遍迁移率行为和极薄Si/SOI中的迁移率退化

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526484

M. Shoji, Y. Omura, M. Tomizawa

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引用次数: 1

摘要

本文通过研究反转层的电子态，揭示了完全耗尽mosfet /SOI的有效迁移率随有效垂直电场的普遍行为的物理根源和局限性。在此背景下，还讨论了极薄Si/SOI的迁移率退化问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Universal mobility behavior in Si/SOI inversion layers and mobility degradation in extremely thin Si/SOI

This paper shows the physical origin and the limitation of the universal behavior of the effective mobility as a function of effective vertical electric field for fully depleted MOSFETs/SOI by investigating the electronic states of the inversion layers. In this context, the mobility degradation of extremely thin Si/SOI is also discussed.

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1995 IEEE International SOI Conference Proceedings

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