Q. H. Le, D. K. Huynh, S. Lehmann, Zhixing Zhao, C. Schwan, T. Kämpfe, M. Rudolph
{"title":"22纳米FDSOI CMOS毫米波噪声建模与分析","authors":"Q. H. Le, D. K. Huynh, S. Lehmann, Zhixing Zhao, C. Schwan, T. Kämpfe, M. Rudolph","doi":"10.1109/SiRF56960.2023.10046210","DOIUrl":null,"url":null,"abstract":"This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"604 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range\",\"authors\":\"Q. H. Le, D. K. Huynh, S. Lehmann, Zhixing Zhao, C. Schwan, T. Kämpfe, M. Rudolph\",\"doi\":\"10.1109/SiRF56960.2023.10046210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.\",\"PeriodicalId\":354948,\"journal\":{\"name\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"604 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF56960.2023.10046210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range
This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
