节能的基于氧化还原的非易失性存储器器件和逻辑电路

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) Pub Date : 2013-10-01 DOI:10.1109/E3S.2013.6705863

R. Waser, V. Rana, S. Menzel, E. Linn

{"title":"节能的基于氧化还原的非易失性存储器器件和逻辑电路","authors":"R. Waser, V. Rana, S. Menzel, E. Linn","doi":"10.1109/E3S.2013.6705863","DOIUrl":null,"url":null,"abstract":"Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Energy-efficient redox-based non-volatile memory devices and logic circuits\",\"authors\":\"R. Waser, V. Rana, S. Menzel, E. Linn\",\"doi\":\"10.1109/E3S.2013.6705863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.\",\"PeriodicalId\":231837,\"journal\":{\"name\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/E3S.2013.6705863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/E3S.2013.6705863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

基于氧化还原的电阻开关存储器(ReRAM)，也被称为纳米离子存储器或记忆元件，被广泛认为提供了超越闪存(关于写入速度，写入能量)和DRAM(可扩展性，保留时间)限制的潜在飞跃，以及神经形态概念的节能方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Energy-efficient redox-based non-volatile memory devices and logic circuits

Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.

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2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

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