采用SOI层直接键合技术制备具有像素并行A/D转换器的三维集成CMOS图像传感器

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7046980

M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake, T. Saraya, M. Kobayashi, E. Higurashi, H. Toshiyoshi, T. Hiramoto

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引用次数: 19

摘要

我们报告了具有像素并行A/D转换器(adc)的三维(3D)集成CMOS图像传感器的首次演示。光电二极管(PD)和逆变器层直接与镀金电极结合，为每个像元提供像元内A/D转换。设计了具有脉冲频率输出的ADC，并制作了64像素的传感器原型。所开发的传感器成功捕获视频图像，并证实了良好的线性度，动态范围超过80 dB，这表明了高性能CMOS图像传感器像素级3D集成的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers

We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D converters (ADCs). Photodiode (PD) and inverter layers were directly bonded with the damascened Au electrodes to provide each pixel with in-pixel A/D conversion. We designed ADC with a pulse frequency output and fabricated a prototype sensor with 64 pixels. The developed sensor successfully captured video images and confirmed excellent linearity with a wide dynamic range of more than 80 dB, which showed feasibility of pixel-level 3D integration for high-performance CMOS image sensors.

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2014 IEEE International Electron Devices Meeting

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