M. le Pallec, R. Bauknecht, M. Bitter, H. Melchior
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A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology.
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