通道宽度、长度和潜在损伤对NBTI的影响

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309971

G. Cellere, M. G. Valentini, Alessandro Paccagnella

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引用次数: 21

摘要

pmosfet在工作条件和高温下负偏置会经历渐进的阈值电压移位(负偏置温度不稳定性，NBTI)。NBTI取决于几个技术因素。本文全面研究了NBTI对通道长度和通道宽度的依赖关系，结果表明，通道较短和较宽的器件对NBTI最敏感。我们还讨论了NBTI对潜在血浆诱导损伤的强敏感性:这使NBTI成为潜在损伤的可靠指标。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of channel width, length, and latent damage on NBTI

pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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