超低剂量率下ELDRS的作用

Dakai Chen, J. Forney, R. Pease, A. Phan, M. Carts, S. R. Cox, K. Kruckmeyer, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, G. Chaumont, Herve Duperray, A. Ouellet, K. Label
{"title":"超低剂量率下ELDRS的作用","authors":"Dakai Chen, J. Forney, R. Pease, A. Phan, M. Carts, S. R. Cox, K. Kruckmeyer, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, G. Chaumont, Herve Duperray, A. Ouellet, K. Label","doi":"10.1109/REDW.2010.5619506","DOIUrl":null,"url":null,"abstract":"We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"The Effects of ELDRS at Ultra-Low Dose Rates\",\"authors\":\"Dakai Chen, J. Forney, R. Pease, A. Phan, M. Carts, S. R. Cox, K. Kruckmeyer, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, G. Chaumont, Herve Duperray, A. Ouellet, K. Label\",\"doi\":\"10.1109/REDW.2010.5619506\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.\",\"PeriodicalId\":278033,\"journal\":{\"name\":\"2010 IEEE Radiation Effects Data Workshop\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2010.5619506\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

我们介绍了在剂量率为10、5、1和0.5 mrad(Si)/s时对各种辐射硬化和商用设备的ELDRS的影响的结果。我们在几个不同部位观察到低于10 mrad(Si)/s的低剂量率增强。剂量率效应的大小各不相同。商用稳压器TL750L在功能失效中表现出剂量率依赖性,0.5 mrad(Si)/s辐照的部件在10 krad(Si)后发生初始失效。RH1021在5 mrad(Si)/s和高剂量率下,低剂量率增强比8 mrad(Si)/s增加了2倍,在100 krad(Si)后参数失效。此外,无eldrs的器件,如LM158和LM117,在参数降解中显示出剂量率敏感性。其他几个部分也显示出剂量率增强,降解相对较低,可达~ 15至20 krad(Si)。在较高的总剂量水平下,剂量率增强的幅度可能会显著增加。
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The Effects of ELDRS at Ultra-Low Dose Rates
We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.
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