一个在20-40GHz时延迟变化6.6%的12ps真时延迟移相器

Q. Ma, D. Leenaerts, R. Mahmoudi
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引用次数: 13

摘要

采用0.25μm SiGe:C BiCMOS技术,实现了延迟时间连续变化12ps的全集成2通道ka波段真时间延迟(TTD)移相器。提出了一种延迟变化抵消技术,在20-40GHz频率范围内,延迟变化小于0.8ps,同时保持恒定的输入阻抗。在高(低)功率模式下,在30GHz下测量的输入1dB压缩点和输入IP3分别为+9.7dBm (+3.6dBm)和+18dBm (+13dBm),在相同的TTD性能下,每通道平均功耗为145mW (33mW)。磁芯移相器的尺寸小于0.1mm2。
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A 12ps true-time-delay phase shifter with 6.6% delay variation at 20–40GHz
A fully integrated 2-channel Ka-band True Time Delay (TTD) phase shifter with 12ps continuous changing delay time has been realized in a 0.25μm SiGe:C BiCMOS technology. A delay variation cancellation technique is proposed, resulting in less than 0.8ps delay variation over a 20-40GHz frequency span, meanwhile maintaining a constant input impedance. In the high (low) power mode, the measured input 1dB compression point and input IP3 are +9.7dBm (+3.6dBm) and +18dBm (+13dBm) at 30GHz with an averaged power consumption per channel of 145mW (33mW) for the same TTD performance. The size of the core phase shifter is less than 0.1mm2.
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