{"title":"SOI mosfet对低功率数字电路的影响","authors":"Y. Tseng, S. Chin, J. Woo","doi":"10.1109/LPE.1997.621291","DOIUrl":null,"url":null,"abstract":"Encouraged by the promising results of SOI device-based studies, CMOS on SOI has recently been suggested for the low power digital applications. In this paper, the crucial effects of SOI device characteristics on switching circuits is investigated, and the relative merits of SOI and bulk devices for circuit applications are compared. As a result, the impact of the floating body on SOI circuit performance and the related device solutions are discussed.","PeriodicalId":334688,"journal":{"name":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","volume":"228 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The impact of SOI MOSFETs on low power digital circuits\",\"authors\":\"Y. Tseng, S. Chin, J. Woo\",\"doi\":\"10.1109/LPE.1997.621291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Encouraged by the promising results of SOI device-based studies, CMOS on SOI has recently been suggested for the low power digital applications. In this paper, the crucial effects of SOI device characteristics on switching circuits is investigated, and the relative merits of SOI and bulk devices for circuit applications are compared. As a result, the impact of the floating body on SOI circuit performance and the related device solutions are discussed.\",\"PeriodicalId\":334688,\"journal\":{\"name\":\"Proceedings of 1997 International Symposium on Low Power Electronics and Design\",\"volume\":\"228 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1997 International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LPE.1997.621291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LPE.1997.621291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of SOI MOSFETs on low power digital circuits
Encouraged by the promising results of SOI device-based studies, CMOS on SOI has recently been suggested for the low power digital applications. In this paper, the crucial effects of SOI device characteristics on switching circuits is investigated, and the relative merits of SOI and bulk devices for circuit applications are compared. As a result, the impact of the floating body on SOI circuit performance and the related device solutions are discussed.
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