{"title":"细窄SOI mosfet中的量子线效应","authors":"X. Baie, J. Colinge, V. Bayot, E. Grivei","doi":"10.1109/SOI.1995.526463","DOIUrl":null,"url":null,"abstract":"If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Quantum-wire effects in thin and narrow SOI MOSFETs\",\"authors\":\"X. Baie, J. Colinge, V. Bayot, E. Grivei\",\"doi\":\"10.1109/SOI.1995.526463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526463\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum-wire effects in thin and narrow SOI MOSFETs
If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
