P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková
{"title":"退火温度对GaAsN/GaAs异质结构发射和俘获过程的影响","authors":"P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková","doi":"10.1109/ASDAM55965.2022.9966749","DOIUrl":null,"url":null,"abstract":"The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures\",\"authors\":\"P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková\",\"doi\":\"10.1109/ASDAM55965.2022.9966749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.\",\"PeriodicalId\":148302,\"journal\":{\"name\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM55965.2022.9966749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM55965.2022.9966749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures
The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.
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