{"title":"一个100GHz有源变容压控振荡器和一个双向注入锁相环","authors":"Shinwon Kang, A. Niknejad","doi":"10.1109/RFIC.2013.6569569","DOIUrl":null,"url":null,"abstract":"A 100GHz fundamental active-varactor VCO and a bi-directionally injection-locked loop are demonstrated in 65nm CMOS. Without using a conventional passive varactor, the proposed VCO achieves a tuning range of 5.2% at 100GHz and a phase noise of -112.1dBc/Hz at 10MHz offset. By utilizing the proposed transmission-line-based capacitive coupling, four oscillators are injection-locked properly and the loop creates eight phases of the carrier and 6dB(=10log4) of phase noise improvement, realizing a measured phase noise is -118.8dBc/Hz at 10MHz offset.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"515 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 100GHz active-varactor VCO and a bi-directionally injection-locked loop in 65nm CMOS\",\"authors\":\"Shinwon Kang, A. Niknejad\",\"doi\":\"10.1109/RFIC.2013.6569569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 100GHz fundamental active-varactor VCO and a bi-directionally injection-locked loop are demonstrated in 65nm CMOS. Without using a conventional passive varactor, the proposed VCO achieves a tuning range of 5.2% at 100GHz and a phase noise of -112.1dBc/Hz at 10MHz offset. By utilizing the proposed transmission-line-based capacitive coupling, four oscillators are injection-locked properly and the loop creates eight phases of the carrier and 6dB(=10log4) of phase noise improvement, realizing a measured phase noise is -118.8dBc/Hz at 10MHz offset.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"515 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 100GHz active-varactor VCO and a bi-directionally injection-locked loop in 65nm CMOS
A 100GHz fundamental active-varactor VCO and a bi-directionally injection-locked loop are demonstrated in 65nm CMOS. Without using a conventional passive varactor, the proposed VCO achieves a tuning range of 5.2% at 100GHz and a phase noise of -112.1dBc/Hz at 10MHz offset. By utilizing the proposed transmission-line-based capacitive coupling, four oscillators are injection-locked properly and the loop creates eight phases of the carrier and 6dB(=10log4) of phase noise improvement, realizing a measured phase noise is -118.8dBc/Hz at 10MHz offset.
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