J. Shen, S. Tehrani, H. Goronkin, G. Kramer, R. Tsui
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An XNOR device in hybrid InAs/AlSb/GaSb and InGaAs material systems
Proposes and demonstrates an XNOR device based on the resonant interband tunneling FET which combines an InAs/AlSb/GaSb resonant interband tunneling diode (RITD) with pseudomorphic InGaAs-channel field effect transistors (FET).
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