P. Hashemi, K. Balakrishnan, S. Engelmann, J. Ott, A. Khakifirooz, A. Baraskar, M. Hopstaken, J. Newbury, Kevin K. H. Chan, E. Leobandung, R. Mo, Dae-gyu Park
{"title":"首次在绝缘体PMOS finfet上展示了高锗含量应变si1−xGex (x=0.5)，具有高空穴迁移率和可扩展的翅片尺寸和栅极长度，可用于高性能应用","authors":"P. Hashemi, K. Balakrishnan, S. Engelmann, J. Ott, A. Khakifirooz, A. Baraskar, M. Hopstaken, J. Newbury, Kevin K. H. Chan, E. Leobandung, R. Mo, Dae-gyu Park","doi":"10.1109/IEDM.2014.7047061","DOIUrl":null,"url":null,"abstract":"For the first time, we report fabrication and characterization of high-performance s-Si<sub>1-x</sub>Ge<sub>x</sub>-OI (x~0.5) pMOS FinFETs with aggressively scaled dimensions. We demonstrate realization of s-SiGe fins with W<sub>FIN</sub> =3.3nm and devices with L<sub>G</sub>=16nm, in a CMOS compatible process. Using a Si-cap-free passivation, we report SS=68mV/dec and μ<sub>eff</sub>=390±12 cm<sup>2</sup>/Vs at N<sub>inv</sub>=10<sup>13</sup>cm<sup>-2</sup>, outperforming the state-of-the-art relaxed Ge FinFETs. We also report the highest performance reported to date among sub-20nm-L<sub>G</sub> pMOS FinFETs at V<sub>DD</sub>=0.5V. In addition, hole transport as well as electrostatics, performance and leakage characteristics of SGOI FinFETs for various dimensions are comprehensively studied in this work.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"126 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications\",\"authors\":\"P. Hashemi, K. Balakrishnan, S. Engelmann, J. Ott, A. Khakifirooz, A. Baraskar, M. Hopstaken, J. Newbury, Kevin K. H. Chan, E. Leobandung, R. Mo, Dae-gyu Park\",\"doi\":\"10.1109/IEDM.2014.7047061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we report fabrication and characterization of high-performance s-Si<sub>1-x</sub>Ge<sub>x</sub>-OI (x~0.5) pMOS FinFETs with aggressively scaled dimensions. We demonstrate realization of s-SiGe fins with W<sub>FIN</sub> =3.3nm and devices with L<sub>G</sub>=16nm, in a CMOS compatible process. Using a Si-cap-free passivation, we report SS=68mV/dec and μ<sub>eff</sub>=390±12 cm<sup>2</sup>/Vs at N<sub>inv</sub>=10<sup>13</sup>cm<sup>-2</sup>, outperforming the state-of-the-art relaxed Ge FinFETs. We also report the highest performance reported to date among sub-20nm-L<sub>G</sub> pMOS FinFETs at V<sub>DD</sub>=0.5V. In addition, hole transport as well as electrostatics, performance and leakage characteristics of SGOI FinFETs for various dimensions are comprehensively studied in this work.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"126 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
For the first time, we report fabrication and characterization of high-performance s-Si1-xGex-OI (x~0.5) pMOS FinFETs with aggressively scaled dimensions. We demonstrate realization of s-SiGe fins with WFIN =3.3nm and devices with LG=16nm, in a CMOS compatible process. Using a Si-cap-free passivation, we report SS=68mV/dec and μeff=390±12 cm2/Vs at Ninv=1013cm-2, outperforming the state-of-the-art relaxed Ge FinFETs. We also report the highest performance reported to date among sub-20nm-LG pMOS FinFETs at VDD=0.5V. In addition, hole transport as well as electrostatics, performance and leakage characteristics of SGOI FinFETs for various dimensions are comprehensively studied in this work.
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