U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch
{"title":"100 GHz转移衬底肖特基集电极异质结双极晶体管","authors":"U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch","doi":"10.1109/ICIPRM.1996.491956","DOIUrl":null,"url":null,"abstract":"We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor\",\"authors\":\"U. Bhattacharya, M. Mondry, G. Hurtz, J. Guthrie, M. Rodwell, T. Liu, C. Nguyen, D. Rensch\",\"doi\":\"10.1109/ICIPRM.1996.491956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.