外延膜键合GaN器件层的异质集成

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2019-03-01 DOI:10.1109/ISDCS.2019.8719268

M. Ogihara, S. Yokoyama, Y. Amemiya

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引用次数: 1

摘要

采用外延膜键合(EFB)技术，研究了GaN发光二极管(LED)薄层与异种材料客体衬底的非均质集成。在客体衬底上的发光操作已被证实。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heterogeneous integration of GaN device layer by epitaxial film bonding

Heterogeneous integration of GaN light emitting diode (LED) thin layers with dissimilar material guest substrates by epitaxial film bonding (EFB) has been studied. Light emitting operation on the guest substrate has been proven.

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2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)

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