纳米场效应二极管的综合研究

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI:10.1109/ESIME.2011.5765817

N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani

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引用次数: 3

摘要

研究了纳米场效应二极管的性能随掺杂浓度和栅极电压的变化规律。数值结果表明，当源极/漏极掺杂浓度从1016 cm−3增加到1021cm−3时，离子/断流比可以从101变化到104。离子/断流比是数字应用中的重要参数。研究了场效应二极管的本征门延迟时间和能量延迟积等性能指标，为今后的逻辑应用提供了有益的选择。

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A comprehensive study of nanoscale Field Effect Diodes

The performance of nanoscale Field Effect Diode as a function of the doping concentration and the gate voltage is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 10¹ to 10⁴ as the doping concentration of source/drain regions increased from 10¹⁶ to 10²¹cm⁻³. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.

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2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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