{"title":"薄膜晶体管失效分析的微结构方法","authors":"J. Lee, Sungsoon Choi, K. Lee","doi":"10.1109/IPFA.2014.6898168","DOIUrl":null,"url":null,"abstract":"As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructural approach to failure analysis of thin film transistors\",\"authors\":\"J. Lee, Sungsoon Choi, K. Lee\",\"doi\":\"10.1109/IPFA.2014.6898168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microstructural approach to failure analysis of thin film transistors
As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.
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