涉及金属-绝缘体-金属(MIM)电容器的等离子体损伤考虑

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309925

B. O'Connell, T. Thibeault, P. Chaparala

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引用次数: 5

摘要

研究了不同介质膜和布局变化对等离子体损伤对MIM电容器可靠性的影响。研究发现，介质类型、MIM布局和底板金属加工对MIM电容器的可靠性非常敏感。确定了影响MIM可靠性的等离子体工艺步骤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Plasma damage considerations involving metal-insulator-metal (MIM) capacitors

Impact on MIM capacitor reliability with respect to plasma damage is investigated for different dielectric films and layout variations. MIM capacitor reliability is found to be sensitive to dielectric type, MIM layout and bottom plate metal processing. Plasma Process steps responsible for affecting MIM reliability are identified.

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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