A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev
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Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits
A procedure for proton-induced upset cross section simulation based on the limited heavy ion experimental data is proposed. Validation and comparison to the existing techniques are provided as well.